22nm FDSOI SRAM single event upset simulation analysis

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Single Event Upset (SEU) in SRAM

Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implem...

متن کامل

Single Event Upset Mitigation Techniques for SRAM-based FPGAs

This paper discusses high level techniques for designing fault tolerant systems in SRAM-based FPGAs, without modification in the FPGA architecture. TMR has been successfully applied in FPGAs to mitigate transient faults, which are likely to occur in space applications. However, TMR comes with high area and power dissipation penalties. The new technique proposed in this paper was specifically de...

متن کامل

Analysis of Current Transients in SRAM Memories for Single Event Upset Detection

Soft errors resulting from the impact of charged particles are emerging as a major issue in the design of reliable circuits at deep sub-micron dimensions even at ground level. To face this challenge, a designer must dispose of a variety of mitigation schemes adapted to their specific design constraints. Built In Current Sensors have been proposed as a detection scheme for single event upsets in...

متن کامل

Fault Tolerance Implementation within SRAM Based FPGA Designs based upon Single Event Upset Occurrence Rates

1 ABSTRACT Emerging technology is enabling the design community to consistently expand the amount of functionality that can be implemented within Integrated Circuits (ICs). As the number of gates placed within an FPGA increases, the complexity of the design can grow exponentially. Consequently, the ability to create reliable circuits has become an incredibly difficult task. In order to ease the...

متن کامل

Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology

In this article, two soft error tolerant SRAM cells, the so-called RATF1 and RATF2, are proposed and evaluated. The proposed radiation hardened SRAM cells are capable of fully tolerating single event upsets (SEUs). Moreover, they show a high degree of robustness against single event multiple upsets (SEMUs). Over the previous SRAM cells, RATF1 and RATF2 offer lower area and power overhead. The H...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Physics: Conference Series

سال: 2021

ISSN: 1742-6588,1742-6596

DOI: 10.1088/1742-6596/1920/1/012069